| PART |
Description |
Maker |
| EG3012 |
Power MOS tube / IGBT gate driver chip tube
|
EGmicro
|
| TA4009F |
1.9GHz BAND PRE AMPLIFIER APPLICATION
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SA1432 |
TRANSISTOR (HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ...
2.4-2.5 GHz Power Amplifier
From old datasheet system
2.4?2.5 GHz Power Amplifier
Single-band power amplifiers
2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
ANADIGICS Inc
ANADIGICS, Inc.
|
| TGA4501-EPU |
28-31 GHz Ka Band HPA 28000 MHz - 31000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
TriQuint Semiconductor,Inc.
TriQuint Semiconductor, Inc.
|
| TGA4915-EPU-CP |
7 W Ka Band Packaged Power Amplifier 28000 MHz - 31000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
TriQuint Semiconductor,Inc.
TriQuint Semiconductor, Inc.
|
| TGA4517-EPU TRIQUINTSEMICONDUCTORINC-TGA4517-EPU |
Ka-Band Power Amplifier 31000 MHz - 37000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
TriQuint Semiconductor,Inc.
TriQuint Semiconductor, Inc.
|
| 2SC351504 |
HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
|
Toshiba Semiconductor
|
| 2SA1384 |
Transistor Silicon PNP Triple Diffused Type (PCT process) HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
|
TOSHIBA
|
| P4C164L-25CC P4C164L-25CM P4C164-25CC P4C164-25CM |
1.5A Dual High-Speed Power MOSFET Drivers, -40C to 125C, 8-SOIC 150mil, T/R
1.5A Dual MOSFET Driver, -40C to 125C, 8-MSOP, TUBE
1.5A MOSFET Drvr W/Boost, Inv, -55C to 125C, 8-CERDIP 300mil, TUBE
1.5A MOSFET Drvr W/Boost, N-Inv, -55C to 125C, 8-CERDIP 300mil, TUBE
1.5A MOSFET Drvr W/Boost, N-Inv, 0C to 70C, 8-PDIP, TUBE
16 Bit Analog Processor, 0C to 70C, 16-SOIC 300mil, T/R
16 Bit Analog Processor, -25C to 85C, 16-CERDIP, TUBE
Precision Analog Front End, 0C to 70C, 24-SOIC 300mil, TUBE
1.5A DUAL MOSFET DRVR, TD MATCH, -40C to 125C, 8-SOIC 150mil, T/R
1.5A Dual MOSFET Drvr, td Match, -40C to 85C, 8-SOIC 150mil, T/R
1.5A DUAL MOSFET DRVR, -40C to 85C, 8-DFN, T/R
1.5A Dual MOSFET Drvr, td Match, -55C to 125C, 8-CERDIP 300mil, TUBE
30V N-Channel PowerTrench MOSFET
1.2A Quad MOSFET Drvr, AND I/P, 0C to 70C, 14-PDIP, TUBE x8的SRAM
x8 SRAM x8的SRAM
|
MOSFETs
Infineon Technologies AG
|
| BLS6G2933P-200 |
LDMOS S-Band radar pallet amplifier 2900 MHz - 3300 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors N.V.
|
|
